BUK426

PHILIPS

BUK426
Euro 10.95 *Prijzen zijn inclusief btw
ArtikelcodeRPA201
BUK426-100A MOSFET N-Channel

Maximum power dissipation (Pd): 45W
Maximum drain-source voltage (Uds): 100V
Maximum drain-gate voltage (Udg): 100V
Maximum gate-source voltage (Ugs): 30V
Maximum drain current (Id): 20A
Maximum junction temperature (Tj): 150°C
Rise Time of BUK426-100A transistor (tr): 40/60nS
Drain-source Capacitance (Cd), pf: 1.25pF
Maximum drain-source on-state resistance (Rds), Ohm: 0.057

Op voorraad / on stock
BUK426-100A MOSFET N-Channel

Maximum power dissipation (Pd): 45W
Maximum drain-source voltage (Uds): 100V
Maximum drain-gate voltage (Udg): 100V
Maximum gate-source voltage (Ugs): 30V
Maximum drain current (Id): 20A
Maximum junction temperature (Tj): 150°C
Rise Time of BUK426-100A transistor (tr): 40/60nS
Drain-source Capacitance (Cd), pf: 1.25pF
Maximum drain-source on-state resistance (Rds), Ohm: 0.057